Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP
- 1 January 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 123-124, 567-570
- https://doi.org/10.1016/s0169-4332(97)00572-2
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Transport properties of low-resistance ohmic contacts to InPThin Solid Films, 1993
- Transport mechanisms in low-resistance ohmic contacts to p-InP formed by rapid thermal annealingApplied Physics Letters, 1993
- Electron transport at metal-semiconductor interfaces: General theoryPhysical Review B, 1992
- Parallel silicide contactsJournal of Applied Physics, 1980