Device applications of multilayer films
- 1 September 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 3 (3) , 484-488
- https://doi.org/10.1109/TMAG.1967.1066100
Abstract
A study has been made of the device applications of multilayer films of Permalloy-SiO-Permalloy. Of particular interest is the application to film memory, where domain wall creep is an important factor. A variety of samples of aT_{p}/T_{d}/T_{p}configuration was investigated. Under the conditions of this study, optimum results were obtained with a structure employing two 300 Å nonmagnetostrictive films separated by 1C kÅ of SiO. For this geometry, both writing and disturb characteristics are significantly improved relative to a conventional 600 Å film. An absence of wall creep is found in this structure, accounting for the improved disturb characteristics. Unexpected interactions are also found which influence the wall motion switching characteristics, but have no significant influence on memory characteristics.Keywords
This publication has 9 references indexed in Scilit:
- Ellipsometry on magnetooptic thin film multilayer systemsApplied Physics B Laser and Optics, 1984
- Review of Wall Creeping in Thin Magnetic FilmsIBM Journal of Research and Development, 1967
- Adjacent element magnetic coupling in continuous film memoriesIEEE Transactions on Magnetics, 1966
- Domain-Wall Structures in Magnetic Double FilmsJournal of Applied Physics, 1966
- Domain Wall Motion in Multilayered Magnetic Thin FilmsJournal of Applied Physics, 1966
- Wall Transitions in Coupled FilmsJournal of Applied Physics, 1965
- Anisotropy magnitude of thin magnetic filmsPhysics Letters, 1963
- Silicon Monoxide Undercoating for Improvement of Magnetic Film Memory CharacteristicsJournal of Applied Physics, 1962
- Very Low Coercive Force in Nickel–iron FilmsNature, 1962