A SiGe MMIC 6-bit PIN diode phase shifter
- 1 December 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 12 (12) , 500-501
- https://doi.org/10.1109/lmwc.2002.805534
Abstract
A 6-bit PIN diode phase shifter has been successfully demonstrated at microwave frequencies in a SiGe bipolar technology. A post-silicon polymer dielectric interconnect technology is implemented to achieve low loss microstrip structures on the silicon substrate. The monolithic microwave integrated circuit exhibits flat phase shift, low VSWR, and low insertion loss variation, over the 7- to 11-GHz band. This phase shifter demonstrates the feasibility of integrating SiGe technology into microwave systems.Keywords
This publication has 4 references indexed in Scilit:
- X-band SiGe monolithic control circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- SiGe HBT technology: a new contender for Si-based RF and microwave circuit applicationsIEEE Transactions on Microwave Theory and Techniques, 1998
- Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuitsIEEE Transactions on Electron Devices, 1995
- Si/SiGe epitaxial-base transistors. II. Process integration and analog applicationsIEEE Transactions on Electron Devices, 1995