Preparation of highly photosensitive hydrogenated amorphous Si-Ge alloys using a triode plasma reactor
- 15 November 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (10) , 1061-1063
- https://doi.org/10.1063/1.96379
Abstract
Highly photoconductive hydrogenated amorphous Si‐Ge alloys have been prepared from a SiH4/GeH4 gas mixture using a triode glow‐discharge reactor. High photoconductivity (Δσp≂10−4 Ω−1 cm−1) under the AM1 (100 mW/cm2) illumination and low dark conductivity (σd=10−8–10−9 Ω−1 cm−1) have been obtained for the optical gap in the range between 1.5 and 1.7 eV.Keywords
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