Lifetime of dominant radicals for the deposition of a-Si:H from SiH4 and Si2H6 glow discharges
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 687-690
- https://doi.org/10.1016/0022-3093(83)90264-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Glow-Discharge Deposition of a-Si: H from Pure Si2H6 and Pure SiH4Japanese Journal of Applied Physics, 1983
- Plasma spectroscopy—Glow discharge deposition of hydrogenated amorphous siliconThin Solid Films, 1982
- Preparations of a-Si:H from Higher Silanes (SinH2n+2) with the High Growth RateJapanese Journal of Applied Physics, 1981
- Deep-level traps in low-dose boron-implanted and low-temperature annealed siliconApplied Physics Letters, 1980
- Lifetimes and Total Transition Probabilities for NH, SiH, and SiDThe Journal of Chemical Physics, 1969