Air-stable n-channel organic thin-film transistors with high field-effect mobility based on N,N′-bis(heptafluorobutyl)-3,4:9,10-perylene diimide
- 19 November 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 91 (21) , 212107
- https://doi.org/10.1063/1.2803073
Abstract
The thin-film transistor characteristics of n -channel organic semiconductor, N , N ′ -bis(2,2,3,3,4,4,4-heptafluorobutyl)-perylene tetracarboxylic diimide, are described. The slip-stacked face-to-face molecular packing allows a very dense parallel arrangement of the molecules, leading to field-effect mobility as high as 0.72 cm 2 V − 1 s − 1 . The mobility only slightly decreased after exposure to air and remained stable for more than 50 days . Our results reveal that molecular packing effects such as close stacking of perylene diimide units and segregation effects imparted by the fluorinated side chains are crucial for the air stability.Keywords
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