Free-to-bound transitions in Si-doped epitaxial Ga1−xAlxAs
- 1 October 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (10) , 6306-6311
- https://doi.org/10.1063/1.328533
Abstract
We have studied silicon‐doped Ga1−xAlxAs by low‐temperature photoluminescence as a function of aluminum composition up to x ∼0.4 and as a function of Si doping at x ∼ 0.4. We have identified a donor‐to‐acceptor pair recombination band due to Si in the spectra at 5.5 K. The Si acceptor energy is determined from the peak position of the corresponding free‐to‐bound transition, which is observed in the 75‐K continuous wave spectra or in the 5.5‐K time‐resolved spectra. It is found to vary from 35 to 62 meV in the range x ∼ 0 to 0.4 and the acceptor is suggested to be Si occuping arsenic sites. The variation of the ionization energy of SiAs with x is intermediate between that of GeAs which shows strong deviation from the effective mass theory and CAs which shows very little deviation.This publication has 28 references indexed in Scilit:
- High-efficiency graded-band-gap Ga1−xAlxAs light-emitting diodesJournal of Applied Physics, 1977
- Growth of thick liquid-phase epitaxial GaAs : Si layers and their characterizationJournal of Applied Physics, 1976
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layersJournal of Crystal Growth, 1972
- Analysis of Doping Anomalies in GaAs by Means of a Silicon-Oxygen Complex ModelJournal of Applied Physics, 1972
- Calculation of distribution equilibrium of amphoteric silicon in gallium arsenideJournal of Physics and Chemistry of Solids, 1972
- Silicon-Doped Gallium Arsenide Grown from Gallium Solution: Silicon Site DistributionJournal of Applied Physics, 1969
- Electrical and Optical Properties of n-Type Si-Compensated GaAs Prepared by Liquid-Phase EpitaxyJournal of Applied Physics, 1969
- Properties of Efficient Silicon-Compensated AlxGa1−xAs Electroluminescent DiodesJournal of Applied Physics, 1969
- Luminescence in Silicon-Doped GaAs Grown by Liquid-Phase EpitaxyJournal of Applied Physics, 1968