Degradation of Current Gain in SiC BJTs

This publication has 3 references indexed in Scilit:

• Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
  Materials Science Forum, 2004
• Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
  Applied Physics Letters, 2002
• Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs
  Solid-State Electronics, 2002