Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

This publication has 5 references indexed in Scilit:

• Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
  Materials Science Forum, 2003
• Dislocation conversion in 4H silicon carbide epitaxy
  Journal of Crystal Growth, 2002
• Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
  Applied Physics Letters, 2002
• Localized electronic states around stacking faults in silicon carbide
  Physical Review B, 2001
• Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
  Materials Science Forum, 2001