Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
- 15 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 433-436, 901-906
- https://doi.org/10.4028/www.scientific.net/msf.433-436.901
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Dislocation evolution in 4H-SiC epitaxial layersJournal of Applied Physics, 2002
- High-Power SiC Diodes: Characteristics, Reliability and Relation to Material DefectsMaterials Science Forum, 2002
- Long Term Operation of 4.5kV PiN and 2.5kV JBS DiodesMaterials Science Forum, 2001
- Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC DiodesMaterials Science Forum, 2001