Dislocation conversion in 4H silicon carbide epitaxy
Top Cited Papers
- 20 September 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 244 (3-4) , 257-266
- https://doi.org/10.1016/s0022-0248(02)01706-2
Abstract
No abstract availableKeywords
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