Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers
- 31 August 1997
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 6 (10) , 1369-1373
- https://doi.org/10.1016/s0925-9635(97)00086-1
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Characterization of Polishing‐Related Surface Damage in (0001) Silicon Carbide SubstratesJournal of the Electrochemical Society, 1995
- Combining high-resolution X-ray diffractometry and topographyJournal of Applied Crystallography, 1991
- Defects in plastically deformed 6H SiC single crystals studied by transmission electron microscopyPhilosophical Magazine A, 1988