A 40 GHz single-ended down-conversion mixer in 0.13 /spl mu/m SiGeC BiCMOS HBT
- 25 July 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 15 (8) , 496-498
- https://doi.org/10.1109/lmwc.2005.852773
Abstract
This work presents a single-ended active mixer realized with a 0.13 /spl mu/m BiCMOS SiGeC heterojunction bipolar transistor (HBT) technology. This mixer is designed to be integrated in a superheterodyne receiver for 40 GHz wireless communication systems. Local oscillator (LO) and RF signals are directly applied to the base of the HBT through two coupled lines. The mixer provides a down-conversion from 42 GHz to 2 GHz. The mixer exhibits a power conversion gain better than 2.4 dB and a measured double-sideband noise figure less than 8.3 dB for P/sub LO/=3 dBm (power of the local oscillator) under a global power consumption lower than 9.5 mW. This architecture exhibits good linearity performance with a measured IP/sub 1dB/ of about -7 dBm and an IIP3 of +4 dBm. The linear dynamic range for a 2 GHz system bandwidth is approximately 65 dB for P/sub LO/=+2 dBm and T/sub 0/=290 K. The third order spurious free dynamic range is calculated to be better than 52 dB.Keywords
This publication has 3 references indexed in Scilit:
- 230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- A 60-GHz superheterodyne downconversion mixer in silicon-germanium bipolar technologyIEEE Journal of Solid-State Circuits, 2004
- Design of CMOS for 60GHz applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004