Schottky barrier and contact resistance at a niobium/silicon interface
- 13 March 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (11) , 1048-1050
- https://doi.org/10.1063/1.100793
Abstract
Electrical transport properties of niobium-silicon contacts are reported over a wide doping range. It is found that a short low-energy argon plasma sputtering of the silicon surface prior to metal deposition lowers the Schottky barrier height by 0.12 eV, without degrading diode ideality. This result is interpreted as a partial explanation for the dependence of the superconducting proximity effect in semiconductors on sputter cleaning.Keywords
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