Edge-emitting electroluminescence polarization investigation of InGaN/GaN light-emitting diodes grown by metal-organic chemical vapor deposition on sapphire (0001)
- 1 November 2003
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 32 (11) , 1330-1334
- https://doi.org/10.1007/s11664-003-0031-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wellsApplied Physics Letters, 2000
- Quantum dots formed by ultrathin insertions in wide-gap matricesThin Solid Films, 2000
- Luminescence spectra from InGaN multiquantum wells heavily doped with SiApplied Physics Letters, 1998
- Determination of valence band splitting parameters in GaNJournal of Applied Physics, 1998
- Electronic band structures and effective-mass parameters of wurtzite GaN and InNJournal of Applied Physics, 1998
- The Polarity of GaN: a Critical ReviewMRS Internet Journal of Nitride Semiconductor Research, 1998
- Analysis of polarization anisotropy along the c axis in the photoluminescence of wurtzite GaNApplied Physics Letters, 1997
- Characteristics of InGaN multi-quantum-well-structure laser diodesApplied Physics Letters, 1996