Luminescence spectra from InGaN multiquantum wells heavily doped with Si
- 22 June 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (25) , 3329-3331
- https://doi.org/10.1063/1.121594
Abstract
A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra.Keywords
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