Epitaxial growth of silicon single crystal layers
- 1 October 1979
- journal article
- Published by Springer Nature in Acta Physica Academiae Scientiarum Hungaricae
- Vol. 47 (1-3) , 93-105
- https://doi.org/10.1007/bf03156514
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Transport Phenomena Measurements in Epitaxial ReactorsJournal of the Electrochemical Society, 1978
- Analysis of Transport Processes in Vertical Cylinder Epitaxy ReactorsJournal of the Electrochemical Society, 1977
- On the Experimental Attainment of Optimum ConditionsJournal of the Royal Statistical Society Series B: Statistical Methodology, 1951