The low-temperature thermoelectric properties of tin-doped bismuth
- 1 December 1979
- journal article
- Published by IOP Publishing in Journal of Physics F: Metal Physics
- Vol. 9 (12) , 2387-2398
- https://doi.org/10.1088/0305-4608/9/12/012
Abstract
The electrical resistivity, thermal conductivity and thermopower of sixteen well characterised tin-doped bismuth samples are reported in the temperature range 2-300K. The results are compared with the existing data on single crystals which they complement. It is shown that good agreement is reached in the overlapping ranges when the tin concentrations are correctly assessed.Keywords
This publication has 13 references indexed in Scilit:
- Evidence for superconductive microsegregations in tin-doped bismuthPhysical Review B, 1979
- The measurement of isothermal galvanomagnetic properties of thermoelectric materialsJournal of Physics E: Scientific Instruments, 1971
- Galvanomagnetic Studies of Sn-Doped Bi. II. Negative Fermi EnergiesPhysical Review B, 1969
- Low-Field Galvanomagnetic Effects in Sn-Doped Bi Crystals at 77°KJournal of Applied Physics, 1967
- Galvanomagnetic Studies of Sn-Doped Bi. I. Positive Fermi EnergiesPhysical Review B, 1967
- Galvanomagnetic Effects and Magnetic Susceptibility of Tin-Doped Bismuth CrystalsJournal of the Physics Society Japan, 1967
- The Temperature Dependence of Some Electrical Properties in Dilute Bi-Sn and Bi-Te AlloysJournal of the Physics Society Japan, 1965
- The magnetic properties of bismuth. II—The de Haas-van Alphen effectProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1936
- The electrical resistance of bismuth alloys.Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1936
- Applications of the Bloch theory to the study of alloys and of the properties of bismuthProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1934