Thermal anneal recovery of silicon surface barriers from argon ion implantation damage
- 1 August 1986
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 142 (1) , 13-20
- https://doi.org/10.1016/0040-6090(86)90298-1
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Effect of low energy Ar+ ion implantation on silicon surface barriersThin Solid Films, 1985
- The Effects of Ion Beam Etching on Si, Ge, GaAs , and InP Schottky Barrier DiodesJournal of the Electrochemical Society, 1985
- Effect of antimony ion implantation on Al-silicon Schottky diode characteristicsJournal of Applied Physics, 1984
- Modification of Schottky barriers in silicon by reactive ion etching with NF3Applied Physics Letters, 1983
- Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etchingJournal of Vacuum Science & Technology A, 1983
- Donor generation in monocrystalline silicon by halogen implantationSolid-State Electronics, 1983
- Technology and applications of broad-beam ion sources used in sputtering. Part II. ApplicationsJournal of Vacuum Science and Technology, 1982
- Effect of ion-beam sputter damage on Schottky barrier formation in siliconApplied Physics Letters, 1981
- Minority carrier lifetime in silicon after Ar+ and Si+ implantationPhysica Status Solidi (a), 1979
- Lifetime effects in ion implanted siliconRadiation Effects, 1970