Effect of ion-beam sputter damage on Schottky barrier formation in silicon
- 1 September 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (5) , 423-425
- https://doi.org/10.1063/1.92738
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- On resolving the anomaly of indium-tin oxide silicon junctionsIEEE Electron Device Letters, 1981
- Electronic properties of Pb1−xHgxSSi heterojunctionsSolid-State Electronics, 1980
- Sputtered oxide/indium phosphide junctions and indium phosphide surfacesJournal of Applied Physics, 1980
- Chemical mechanisms of Schottky barrier formationJournal of Vacuum Science and Technology, 1979
- Effects of ultrathin oxides in conducting MIS structures on GaAsJournal of Vacuum Science and Technology, 1978
- Dependence of residual damage on temperature during Ar+ sputter cleaning of siliconJournal of Applied Physics, 1977
- Schottky Barrier Height Control by Using Knock-on Effect in Ion ImplantationJapanese Journal of Applied Physics, 1977
- Control of Schottky barrier height using highly doped surface layersSolid-State Electronics, 1976
- The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodesSolid-State Electronics, 1976