Amorphous silicon TFT active-matrix OLED pixel

27 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 1, 130-131 vol.1
https://doi.org/10.1109/leos.1998.737767

Abstract

We report the fabrication of a video-brightness, active-matrix organic LED (AMOLED), two-transistor-pixel based on amorphous silicon (a-Si) TFT technology, with a maximum process temperature of 350 C. The process should be compatible with existing a-Si TFT manufacturing technology for AMLCDs.

Keywords

AMORPHOUS SILICON
THIN FILM TRANSISTORS
ACTIVE MATRIX TECHNOLOGY
ORGANIC LIGHT EMITTING DIODES
FABRICATION
LIGHT EMITTING DIODES
ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODES
TEMPERATURE
MANUFACTURING PROCESSES
ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS

This publication has 3 references indexed in Scilit:

Damascene-gate thin film transistors
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
Efficient organic electroluminescent devices using single-layer doped polymer thin films with bipolar carrier transport abilities
IEEE Transactions on Electron Devices, 1997
7 terahertz broadband GaP electro-optic sensor
Applied Physics Letters, 1997