Reduction of low-frequency noise in n-p-n AlGaAs/GaAs HBT's
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (12) , 2718-2719
- https://doi.org/10.1109/16.158754
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuitsIEEE Transactions on Electron Devices, 1987
- GaAs FET's with a flicker-noise corner below 1 MHzIEEE Transactions on Electron Devices, 1987