Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin-film transistor structures
- 19 March 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (12) , 1140-1142
- https://doi.org/10.1063/1.102543
Abstract
Electron cyclotron resonance plasmas have been used to produce the most effective, shortest time plasma hydrogenation of thin‐film polycrystalline silicon transistors yet reported. We demonstrate that significant improvement in device characteristics can be achieved with these plasmas using exposure times of the order of only 1 min and that 5 min exposures give saturated characteristics of a 2 V threshold voltage, a 65 cm2/V s mobility, and a 107 on/off ratio. We also explore the pressure and power level dependence of this passivation, as well as the effects of shielding with a grid, and show that the more efficient and more stable electron cyclotron resonance hydrogen exposures are at lower pressures.Keywords
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