Dependence of the electron mobility on the acceptor concentration in Si δ-doped GaAs

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Abstract
The effect of the background acceptor concentration on the electron mobility in Si δ-doped GaAs has been investigated. The subband electronic structure of the δ-doped system was obtained by solving self-consistently the coupled Schrödinger and Poisson equations. The screened ionized impurity potential is considered by taking the dielectric matrix of the multisubband system within the random-phase approximation. We found that the background acceptor concentration in the present system strongly modifies both the mobilities of electrons in higher subbands and the average drift mobility. Our results may provide useful information for the interpretation of experimental mobility data in δ-doped semiconductors and related devices.