Electron energy levels in a δ-doped layer in GaAs
- 15 September 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (11) , 5580-5584
- https://doi.org/10.1103/physrevb.44.5580
Abstract
Calculated results for energy levels of electrons in a Si δ-doped layer in GaAs are presented at T=0 K and ambient temperature. Their sensitivity to the donor distribution is examined. The many-body exchange-correlation effects are taken into account in the local-density-functional approximation.Keywords
This publication has 23 references indexed in Scilit:
- Photoluminescence from the quasi-two-dimensional electron gas at a single silicon δ-doped layer in GaAsPhysical Review B, 1990
- Raman scattering from electronic excitations in periodically δ-doped GaAsSurface Science, 1990
- Beryllium δ doping of GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1990
- Resonant excitation of a layer of Si donors in GaAsSemiconductor Science and Technology, 1989
- The σ doping layer: Electronic properties and device perspectivesMaterials Science and Engineering: B, 1988
- Subband physics for a “realistic” δ-doping layerSurface Science, 1988
- Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensionsSemiconductor Science and Technology, 1988
- Inelastic light scattering by electronic excitations in semiconductor heterostructuresIEEE Journal of Quantum Electronics, 1986
- The δ-Doped Field-Effect TransistorJapanese Journal of Applied Physics, 1985
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980