Beryllium δ doping of GaAs grown by molecular beam epitaxy
- 15 February 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (4) , 1969-1979
- https://doi.org/10.1063/1.345576
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of siliconApplied Physics Letters, 1989
- Diffusion and drift of Si dopants in δ-doped n-type AlxGa1−xAsApplied Physics Letters, 1989
- Ultrahigh Be doping of Ga0.47In0.53As by low-temperature molecular beam epitaxyApplied Physics Letters, 1989
- Diffusion of atomic silicon in gallium arsenideApplied Physics Letters, 1988
- Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300KSolid State Communications, 1987
- The δ-Doped Field-Effect TransistorJapanese Journal of Applied Physics, 1985
- Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and modelApplied Physics Letters, 1984
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979
- Annealing studies of Be-doped GaAs grown by molecular beam epitaxyApplied Physics Letters, 1978
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961