Infrared near-field imaging of implanted semiconductors: Evidence of a pure dielectric contrast
- 4 August 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (5) , 575-577
- https://doi.org/10.1063/1.119798
Abstract
In this letter, we demonstrate the ability of our reflection mode scanning near-field optical microscope functioning in the mid-infrared to reveal infrared dielectric contrast in absence of any topographical contrast. This contrast is induced by local structures prepared by low energy boron implantation in silicon.Keywords
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