LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GaAs AND SI
- 1 November 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (9) , 378-380
- https://doi.org/10.1063/1.1653443
Abstract
Measurements of the surface topography of ion‐bombarded GaAs and Si show a marked elevation of the irradiated portion of the surface relative to the surrounding unirradiated material. The average lattice atom displacement brought about by the expansion can cause anomalously high yields of displaced atoms as measured by backscattering of particles incident along channeling directions.Keywords
This publication has 14 references indexed in Scilit:
- ON THE NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMSApplied Physics Letters, 1969
- Relation of neutron to ion damage annealing in Si and GeRadiation Effects, 1969
- X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion ImplantationPhysica Status Solidi (b), 1969
- The Energy Dependence of Lattice Disorder in Ion‐Implanted SiliconPhysica Status Solidi (b), 1969
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- OBSERVATION OF MISFIT DISLOCATIONS IN GaAs–Ge HETEROJUNCTIONSApplied Physics Letters, 1967
- Structure of Deuteron-Irradiated GermaniumPhysical Review B, 1959
- Radiation Damage Experiments and the Nature of Thermal Spikes in III-V CompoundsPhysical Review B, 1958
- Radiation-Induced Expansion of SemiconductorsPhysical Review B, 1957
- Radiation Damage Experiments in III-V-CompoundsPhysical Review B, 1957