Performance and reliability concerns of ultra-thin SOI and ultra-thin gate oxide MOSFETs
- 19 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 847-850
- https://doi.org/10.1109/iedm.1995.499349
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- Stress-induced leakage current in ultrathin SiO2 filmsApplied Physics Letters, 1994
- Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulatorIEEE Transactions on Electron Devices, 1991