Investigation of low field and high temperature SiO2 and ONO leakage currents using the floating gate technique

This publication has 6 references indexed in Scilit:

• Thickness scaling limitation factors of ONO interpoly dielectric for nonvolatile memory devices
  IEEE Transactions on Electron Devices, 1996
• Temperature dependence of the Fowler–Nordheim current in metal-oxide-degenerate semiconductor structures
  Journal of Applied Physics, 1995
• Measurement of very low tunneling current density in SiO/sub 2/ using the floating-gate technique
  IEEE Electron Device Letters, 1991
• A novel floating-gate method for measurement of ultra-low hole and electron gate currents in MOS transistors
  IEEE Electron Device Letters, 1986
• Current-field characteristics of oxides grown from polycrystalline silicon
  Applied Physics Letters, 1979
• Electron emission in intense electric fields
  Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1928