Thickness scaling limitation factors of ONO interpoly dielectric for nonvolatile memory devices
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (1) , 47-53
- https://doi.org/10.1109/16.477592
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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