Alloy effects on the band offsets of-ZnSe heterostructures
- 15 January 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (4) , 2184-2190
- https://doi.org/10.1103/physrevb.47.2184
Abstract
The band offsets of -ZnSe heterostructures are calculated within a self-consistent tight-binding model including spin-orbit coupling considering several sulfur concentrations x and in the two extreme strain states that can be imposed on the structure (strained to a ZnSe or to a lattice parameter). The commutativity of the valence- and conduction-band offsets is examined. The conduction-band offset Δ is found to be weak for x≃1 and whatever the strain state imposed. The variation of Δ with respect to the sulfur concentration x is mainly driven by the bowing effect of the band gap. We show that the vanishing value of the conduction-band offset can be obtained through a diminution of the band-gap bowing effect which may be achieved in - superlattices, leading to the possibility for these structures to be effective-mass superlattices.
Keywords
This publication has 39 references indexed in Scilit:
- Calculation of hydrostatic and uniaxial deformation potentials with a self-consistent tight-binding model for Zn-cation-based II-VI compoundsPhysical Review B, 1991
- Electronic and optical properties of ZnSe-ZnS effective-mass strained superlatticesPhysical Review B, 1990
- Role of interface strain in a lattice-matched heterostructurePhysical Review Letters, 1990
- Electronic structure and stability of II–VI semiconductors and their alloys: The role of metal d bandsJournal of Vacuum Science & Technology A, 1988
- Dipole effects and band offsets at semiconductor interfacesPhysical Review B, 1988
- Theoretical approach to heterojunction valence-band discontinuities: Case of a common anionPhysical Review B, 1987
- Optical absorption from polarons in a diatomic polymerPhysical Review B, 1987
- Tunneling of H and D trapped by O(N) in niobium by anelastic relaxation measurementsPhysical Review B, 1986
- Effective-mass superlatticePhysical Review B, 1984
- The metal-semiconductor interface: Si (111) and zincblende (110) junctionsJournal of Physics C: Solid State Physics, 1977