Empirical Tight‐Binding Band Structure of Wurtzite Semiconductors SiC, ZnSe, and ZnTe
- 1 February 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 127 (2) , 543-547
- https://doi.org/10.1002/pssb.2221270214
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electronic band structures for zinc-blende and wurtzite CdSPhysical Review B, 1983
- Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnOPhysical Review B, 1983
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Theory of Substitutional Deep Traps in Covalent SemiconductorsPhysical Review Letters, 1980
- An oxygen pseudopotential: Application to the electronic structure of ZnOSolid State Communications, 1977