High-power, high-efficiency cell design for 26 GHz HBT power amplifier
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (0149645X) , 843-846
- https://doi.org/10.1109/mwsym.1996.511069
Abstract
We describe a 6-chip combination HBT power amplifier and a single-cell chip with excellent power-added efficiency (PAE) and power density at 24-26 GHz. The power amplifier, based on our conventional chip design, exhibited 2.2 W output power with 19% PAE and 5 dB linear gain. To further improve the efficiency and power-density, various types of HBT cells were characterized. The optimum cell (184 /spl mu/m/sup 2/) exhibited 740 mW output power equivalent to power density of 4.0 mW//spl mu/m2, while a record high PAE of 42% was obtained. These results compare well with the best data reported at lower frequency bands (<18 GHz), thereby showing great potential for high-power, high-efficiency HBTs in near MM-wave bands.Keywords
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