Millimeter-wave AlGaAs-GaAs HBT power operation
- 1 October 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 2 (10) , 397-399
- https://doi.org/10.1109/75.160119
Abstract
The AlGaAs-GaAs HBT has demonstrated good power performance up to 18 GHz. Although f/sub max/ is typically above 100 GHz, the power performance limitation and large signal operation at millimeter wave frequencies have not been studied. Power results from two HBT structures at 35 GHz are analyzed based on numerical simulation. The HBT demonstrated 8.5-dB linear power gain, 30% PAE with 7.8-dB gain and 7.5-V V/sub ce/ bias. The power density reaches 1.25 mW/ mu m/sup 2/. A shorter collector (0.4 mu m) is shown to be better suited for 35-GHz operation as a result of shorter collector transit time and smaller residual collector voltage. Improvement can be achieved by reducing the base and collector resistance, and the collector capacitance.Keywords
This publication has 5 references indexed in Scilit:
- Heterojunction bipolar transistors for high efficiency power amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Self-aligned, emitter-edge-passivated AlGaAs/GaAs heterojunction bipolar transistors with extrapolated maximum oscillation frequency of 350-GHzIEEE Transactions on Electron Devices, 1992
- 0.7 W X-Ku-band high-gain, high-efficiency common base power HBTIEEE Microwave and Guided Wave Letters, 1991
- Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHzIEEE Transactions on Microwave Theory and Techniques, 1990