Measurements of concentration-dependent spin-lattice relaxation times in phosphorus-doped silicon at low temperatures
- 15 October 1970
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 8 (20) , 1639-1643
- https://doi.org/10.1016/0038-1098(70)90481-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Concentration dependent spin-lattice relaxation in n-type siliconJournal of Physics and Chemistry of Solids, 1968
- Concentration- and Compensation-Dependent Spin-Lattice Relaxation in-Type SiliconPhysical Review B, 1968
- General Theory of Cross Relaxation. IV. MomentsPhysical Review B, 1964
- Electron Paramagnetic Resonance Apparatus Operating at Liquid He3 TemperaturesReview of Scientific Instruments, 1962
- Theory of Nuclear Quadrupole Interaction in Beryllium MetalPhysical Review B, 1960
- Electron Spin-Lattice Relaxation in Phosphorus-Doped SiliconPhysical Review B, 1960
- Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation EffectsPhysical Review B, 1959