Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser
- 5 June 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (23) , 3355-3357
- https://doi.org/10.1063/1.126646
Abstract
Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions in self-organized In0.4Ga0.6As/GaAs quantum dots, has been characterized. Measurements were made with a multidot layer near-infrared (∼1 μm) interband laser. The far-infrared signal, centered at 12 μm, was enhanced after the interband transition reached threshold at 300 K. The results are explained in terms of the carrier dynamics in the dots.Keywords
This publication has 21 references indexed in Scilit:
- Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dotsApplied Physics Letters, 1999
- Self-assembled InAs-GaAs quantum-dot intersubband detectorsIEEE Journal of Quantum Electronics, 1999
- Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectorsApplied Physics Letters, 1998
- Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectorsApplied Physics Letters, 1998
- Rapid carrier relaxation in quantum dots characterized by differential transmission spectroscopyPhysical Review B, 1998
- Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dotsJETP Letters, 1998
- Energy relaxation by multiphonon processes in InAs/GaAs quantum dotsPhysical Review B, 1997
- Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band studyPhysical Review B, 1997
- Room temperature luminescence from self-organized InxGa1 − xAsGaAs (0.35 < x < 0.45) quantum dots with high size uniformityJournal of Crystal Growth, 1997
- Quantum Cascade LaserScience, 1994