8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs
- 25 April 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (9) , 734-735
- https://doi.org/10.1049/el:19910456
Abstract
An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transinipedance amplifier, and a 50Ω output buffer has been fabricated using an enhancement/depletion 0.5/an recessed-gate AIGaAs/GaAs HEMT process. Successful operation at data rates up to lOGbit/s has been demonstrated.Keywords
This publication has 1 reference indexed in Scilit:
- Etching of GaAs on AlGaAs in Rie-ModeMRS Proceedings, 1989