Hall Mobility in Strained SiGe p-Mosfets
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructuresIEEE Electron Device Letters, 1991
- The measurement of surface boron on silicon wafers annealed in vacuum and gas ambientsThin Solid Films, 1989
- Insulating, metallic, or semimetallic electronic nature of XSi2 compounds: Application to WSi2Journal of Applied Physics, 1987
- On the role of scattering by surface roughness in silicon inversion layersSurface Science, 1973
- Physics of Semiconductor DevicesPhysics Today, 1970