Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics
- 25 June 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Boron penetration studies from p+ polycrystalline Si through HfSixOyApplied Physics Letters, 2002
- Application of HfSiON as a gate dielectric materialApplied Physics Letters, 2002
- Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution depositionJournal of Applied Physics, 2001
- Hafnium and zirconium silicates for advanced gate dielectricsJournal of Applied Physics, 2000
- Characterization of inversion-layer capacitance of holes in Si MOSFET'sIEEE Transactions on Electron Devices, 1999