Laser annealing of silicon wafers at 10.6 μm
- 16 March 1981
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 64 (1) , 407-412
- https://doi.org/10.1002/pssa.2210640144
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Annealing of phosphorus-ion-implanted silicon using a CO2 laserApplied Physics Letters, 1979
- Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiationApplied Physics Letters, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978