Ammonium-Salt-Added Silica Slurry for the Chemical Mechanical Polishing of the Interlayer Dielectric Film Planarization in ULSI's

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Abstract
Based on the theory of colloid, a new KOH-free silica slurry is developed for chemical mechanical polishing (CMP) to planarize the interlayer dielectric films in ULSI's. The ammonium salt addition to the slurries of pH=6-7 promotes the silica particle agglomeration in the slurry, and enlarges the effective abrasive particle size. The particle agglomeration yields a high polishing rate due to increasing of the mechanical effect, and good particle removability with scrub cleaning is achieved. The ammonium salt-added slurry provides the high-speed CMP without alkaline-metal contamination to the LSI fabrication line.

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