Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors
- 4 September 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (10) , 987-989
- https://doi.org/10.1063/1.101697
Abstract
We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass transport limited in the temperature range of 420–580 °C. It is kinetic controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.Keywords
This publication has 8 references indexed in Scilit:
- Atomic layer epitaxy for the growth of heterostructure devicesJournal of Crystal Growth, 1988
- Self-Limited Growth in InP Epitaxy by Alternate Gas SupplyJapanese Journal of Applied Physics, 1988
- Recent progress in atomic layer epitaxy of III–V compoundsJournal of Crystal Growth, 1988
- Elucidation of the organometallic vapor phase epitaxial growth mechanism for InPApplied Physics Letters, 1987
- Mechanism of surface reaction in GaAs layer growthSurface Science, 1987
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986
- Atomic layer epitaxyJournal of Applied Physics, 1986
- Flow-Rate Modulation Epitaxy of GaAsJapanese Journal of Applied Physics, 1985