Self-Limited Growth in InP Epitaxy by Alternate Gas Supply
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A) , L2189
- https://doi.org/10.1143/jjap.27.l2189
Abstract
Self-limited growth in InP epitaxy was investigated by alternately exposing the substrate to (CH3)3In(TMIn) and PH3. The growth proceeded in the atomic layer epitaxy (ALE) mode at a low temperature of 350°C. The growth rate saturated at about 0.5 monolayers (ML)/cycle, independent of the mole fractions and the exposure times of TMIn and PH3. The surface morphology and thickness uniformity were greatly improved by ALE, indicating the superiority of ALE in the fabrication of ultrathin layers and abrupt interfaces.Keywords
This publication has 8 references indexed in Scilit:
- Growth and characterization of compound semiconductors by atomic layer epitaxyJournal of Crystal Growth, 1986
- Decomposition kinetics of OMVPE precursorsJournal of Crystal Growth, 1986
- Chemical and morphological aspects of the build-up of the interface between InP(100) and column III metal overlayersSurface Science, 1986
- GaAs Atomic Layer Epitaxy by Hydride VPEJapanese Journal of Applied Physics, 1986
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985
- Characterization of surface exchange reactions used to grow compound filmsApplied Physics Letters, 1981
- An Examination of the Product Catalyzed Reaction of Trimethylgallium with Phosphine and the Mechanism of the Chemical Vapor Deposition of Gallium Phosphide and Gallium ArsenideJournal of the Electrochemical Society, 1977
- THE PYROLYSIS OF TRIMETHYLINDIUMCanadian Journal of Chemistry, 1964