Recombination of impact ionized excess carriers in n-type and p-type indiumantimonide
- 16 August 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 12 (2) , 477-481
- https://doi.org/10.1002/pssa.2210120215
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Recombination of Impact Ionized Excess Carriers in TelluriumPhysica Status Solidi (b), 1971
- InSb Carrier Lifetime in High Electric FieldJapanese Journal of Applied Physics, 1971
- The capture of hot electrons by Au-and Au2-centres in germanium at 20 KProceedings of the Physical Society, 1965
- Carrier Lifetime in Indium AntimonidePhysical Review B, 1961