Thermal electron excitation as a probe for chemical and electrochemical steps in the anodic dissolution of III–V semiconductor electrodes
- 1 October 1989
- journal article
- Published by Elsevier in Journal of Electroanalytical Chemistry and Interfacial Electrochemistry
- Vol. 270 (1-2) , 175-189
- https://doi.org/10.1016/0022-0728(89)85035-1
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The Anodic Decomposition Mechanism of n ‐ GaP Electrodes: A Hole Injection StudyJournal of the Electrochemical Society, 1989
- Electron Excitation and Chemical Steps during Anodic Decomposition of n‐GaAs Electrodes: A Hole Injection StudyBerichte der Bunsengesellschaft für physikalische Chemie, 1988
- On the role of chemical steps in the anodic dissolution of illuminated n-type GaAs electrodesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1987
- Studies on the n-GaAs Photoanode in Aqueous Electrolytes. 1. Behaviour of the Photocurrent in the Presence of a Stabilizing AgentBerichte der Bunsengesellschaft für physikalische Chemie, 1985
- Study of Stabilization and Surface Recombination on n ‐ GaP Photoelectrodes: Mechanisms and InterrelationJournal of the Electrochemical Society, 1982
- On the electronic current flowing when an n-type AIII Bv semiconductor is dissolvedJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1980
- Anodic Processes at the n‐ and p‐Type GaP ElectrodesBerichte der Bunsengesellschaft für physikalische Chemie, 1977
- Zum Mechanismus der Auflösung von Galliumarsenid durch OxydationsmittelZeitschrift für Physikalische Chemie, 1969
- Electrochemical properties of gallium phosphide in aqueous solutionsElectrochimica Acta, 1968
- Über den Mechanismus der anodischen Auflösung von GalliumarsenidBerichte der Bunsengesellschaft für physikalische Chemie, 1965