MOVPE-grown MCT layers: low-temperature direct alloy growth versus IMP
- 1 December 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (12C) , C22-C25
- https://doi.org/10.1088/0268-1242/6/12c/005
Abstract
The present status of the interdiffused multilayer process (IMP) for the growth of (Hg,Cd)Te layers is presented, with reference to electronic, structural and device properties of the layers, and is compared with the low-temperature growth of mercury cadmium telluride (MCT) layers. The use of (211) GaAs substrates for the growth by IMP of MCT layers allows us to get rid of the hillocks. A growth temperature of about 280 degrees C has been found to be optimum for the growth of layers of high electronic and structural quality using precursors with a low decomposition temperature.Keywords
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