Plasma-enhanced chemical vapor deposited HgTe-CdTe epitaxial superlattices
- 3 April 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (14) , 1329-1331
- https://doi.org/10.1063/1.100706
Abstract
For the first time, small-period epitaxial superlattices were grown using plasma-enhanced chemical vapor deposition. The superlattices were periods of HgTe-CdTe grown on CdTe substrates at 150 °C using dimethylcadmium, dimethylmercury, and dimethyltelluride. Cross-section transmission electron microscopy shows that layers as thin as 80 Å were obtained.Keywords
This publication has 13 references indexed in Scilit:
- Plasma-controlled deposition of GaAs and GaAsP by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Quantum wells and superlatticesJournal of Non-Crystalline Solids, 1987
- Plasma enhanced chemical vapor deposition of epitaxial mercury tellurideApplied Physics Letters, 1987
- Plasma-enhanced metalorganic chemical vapor deposition of GaAsApplied Physics Letters, 1987
- Plasma stimulated MOCVD of GaAsJournal of Crystal Growth, 1986
- Plasma-assisted low temperature epitaxyJournal of Vacuum Science & Technology A, 1986
- Plasma-assisted metalorganic chemical vapor deposition of ZnSe filmsJournal of Applied Physics, 1986
- Summary Abstract: Preparation of free-standing Ge(100) thin films using plasma-enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1985
- Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancementJournal of Applied Physics, 1985
- Amorphous Semiconductor SuperlatticesPhysical Review Letters, 1983