Plasma-controlled deposition of GaAs and GaAsP by metalorganic chemical vapor deposition
- 29 February 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (9) , 726-727
- https://doi.org/10.1063/1.99360
Abstract
Alternating layers of GaAs and GaAsxP1−x with varying x were grown at low temperatures using a plasma‐enhanced metalorganic chemical vapor deposition process. A remote plasma localized to a region above the substrate was used to selectively dissociate arsine and phosphine and allow GaAs and GaAsxP1−x to be grown at low temperatures where no appreciable deposition takes place without the plasma. This made it possible to use the plasma as a switch to turn deposition on and off. The technique was used to produce very abrupt multiple layers of GaAs and GaAsxP1−x by changing gases when the plasma was off.Keywords
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