Growth of GeSi/Si strained-layer superlattices using limited reaction processing
- 15 March 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (6) , 2407-2409
- https://doi.org/10.1063/1.337960
Abstract
SiGe/Si superlattices were grown using limited reaction processing. Each multilayer structure was fabricated in situ by changing the gas composition between high-temperature cycles. Commensurate SiGe alloy layers as thin as 15 nm were reproducibly deposited and were examined using transmission electron microscopy, sputtering Auger electron spectroscopy, and Rutherford backscattering. Si/SiGe interfaces are abrupt to within a few monolayers, establishing for the first time the use of a chemical vapor deposition technique to fabricate abrupt GeSi/Si-based heterostructures.This publication has 10 references indexed in Scilit:
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